Improved contacts to p-type ZnSe using a ZnTe/Ga2Se3 contact layer and related p-n junction diode structures

被引：0
|
作者：
Yoshida, T [1 ]
Kobayashi, M [1 ]
Yoshikawa, A [1 ]
机构：
[1] CHIBA UNIV,FAC ENGN,DEPT ELECT & ELECT ENGN,INAGE KU,CHIBA 263,JAPAN
来源：
BLUE LASER AND LIGHT EMITTING DIODES | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：461 / 464
页数：4
相关论文
共 50 条
  • [1] IMPROVED OHMIC CONTACTS FOR P-TYPE ZNSE AND RELATED P-ON-N DIODE STRUCTURES
    LANSARI, Y
    REN, J
    SNEED, B
    BOWERS, KA
    COOK, JW
    SCHETZINA, JF
    APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2554 - 2556
  • [2] Reduction of p-ZnTe/p-ZnSe valence band discontinuity by a Ga2Se3 interfacial layer
    Yoshida, T
    Nagatake, T
    Kobayashi, M
    Yoshikawa, A
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 750 - 753
  • [3] OHMIC CONTACTS TO P-TYPE ZNSE USING ZNTE/ZNSE MULTIQUANTUM WELLS
    HIEI, F
    IKEDA, M
    OZAWA, M
    MIYAJIMA, T
    ISHIBASHI, A
    AKIMOTO, K
    ELECTRONICS LETTERS, 1993, 29 (10) : 878 - 879
  • [4] Impurity distribution in ZnSe p-n junctions prepared by Ga diffusion in p-type ZnSe
    Sakurai, F
    Suto, K
    Nishizawa, J
    Oyama, Y
    Motozawa, M
    Hara, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (02) : 747 - 750
  • [5] REALIZATION OF BOTH P-TYPE AND N-TYPE CONDUCTION FOR ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES
    KOBAYASHI, M
    DOSHO, S
    IMAI, A
    KIMURA, R
    KONAGAI, M
    TAKAHASHI, K
    APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1602 - 1604
  • [6] P-n junction diodes with polarization induced p-type graded InxGa1-xN layer
    Enatsu, Yuuki
    Gupta, Chirag
    Keller, Stacia
    Nakamura, Shuji
    Mishra, Umesh K.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (10)
  • [7] Oxygen Stoichiometry Engineering in P-Type NiOx for High-Performance NiO/Ga2O3 Heterostructure p-n Diode
    Hong, Yuehua
    Zheng, Xuefeng
    Zhang, Hao
    He, Yunlong
    Zhu, Tian
    Liu, Kai
    Li, Ang
    Ma, Xiaohua
    Zhang, Weidong
    Zhang, Jianfu
    Hao, Yue
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (11):
  • [8] ELECTRICAL-PROPERTIES OF P-TYPE AND N-TYPE ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES
    KOBAYASHI, M
    DOSHO, S
    IMAI, A
    KIMURA, R
    KONAGAI, M
    TAKAHASHI, K
    SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (02) : 221 - 225
  • [9] Reliable ohmic contacts to LPE p-type 4H-SiC for high-power p-n diode
    (Trans Tech Publications Ltd): : 389 - 393
  • [10] Reliable ohmic contacts to LPE p-type 4H-SiC for high-power p-n diode
    Kakanakov, R
    Kassamakova, L
    Hristeva, N
    Lepoeva, G
    Kuznetsov, N
    Zekentes, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 917 - 920
12345