Quantum dot devices for optoelectronics applications

被引:0
|
作者
Su, YK [1 ]
Ji, LW [1 ]
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
关键词
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中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This work focused on the optoclectronics applications of nitride-based quantum dot devices. It includes the growth and characterization of InGaN/GaN self-assembled quantum dots (SAQDs) and related optoelectronic devices (MQD LEDs and MSM PDs with QDs) by metalorganic vapor phase epitaxy (MONIPE). The optical and structural properties of InGaN/GaN nanostructures have been characterized by photoluminescence (PL), Raman, scanning near-field optical microscopy (SNOM), atomic force microscopy (AFM), and high-resolution transmission electron microscopy (HRTEM), respectively. Index Terms- GaN, quantum dots, photodiodes, light-emitting diodes, metal-organic chemical vapor deposition, Raman, SNOM.
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页码:27 / 28
页数:2
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