Si1-xGex laterally graded crystals as monochromators for x-ray absorption spectroscopy studies

被引:3
|
作者
Veldkamp, M
Erko, A
Gudat, W
Abrosimov, NV
Alex, V
Khasanov, S
Shekhtman, V
Neissendorfer, F
Pietsch, U
机构
[1] Berliner Elektronenspeicherring Gesell Synchrotro, D-12489 Berlin, Germany
[2] Inst Crystal Growth Berlin, D-12489 Berlin, Germany
[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia
[4] Univ Potsdam, Inst Phys, D-14415 Potsdam, Germany
关键词
x-ray diffraction; crystal optics; laterally graded crystals; Si1-xGex crystals;
D O I
10.7567/JJAPS.38S1.612
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using the BESSY I wavelength shifter (WLS) beamline we have examined the energy resolution of a laterally graded Si1-xGex crystal in the full divergent, white synchrotron beam. At the Fe-EC absorption edge (E = 7112 eV) we have measured an energy resolution of E/Delta E=7.1 . 10(4) for the (440) reflection and a vertical divergence of 0.63 mrad. For a pure Si(440) reference crystal and the same divergence we found E/Delta E=7.1 . 10(3) which means a factor of 10 improvement in the case of the laterally graded crystal. Similar results have been obtained at the Co-K absorption edge (E = 7710 eV) with an increase of 2.6 for E/Delta E. We present the experimental set-up and a method for the characterization of the absolute lattice parameter with a precision of Delta d/d = 2 . 10(-5). In addition, we discuss the application of the laterally graded Si1-xGex crystals in the crystal monochromator KMC-2 at the BESSY II storage ring.
引用
收藏
页码:612 / 615
页数:4
相关论文
共 50 条
  • [41] GROWTH AND CHARACTERIZATION OF COMPOSITIONALLY GRADED, RELAXED SI1-XGEX
    LARSEN, AN
    HANSEN, JL
    JENSEN, RS
    SHIRYAEV, SY
    OSTERGAARD, PR
    HARTUNG, J
    DAVIES, G
    JENSEN, F
    PETERSEN, JW
    [J]. PHYSICA SCRIPTA, 1994, 54 : 208 - 211
  • [42] Composition determination of Si/Si1-xGex/Si by photoreflectance spectroscopy
    Chen, CC
    Kelly, PV
    Liu, ZH
    Huang, WT
    Dou, WZ
    Tsien, PH
    [J]. METALS AND MATERIALS INTERNATIONAL, 2004, 10 (05) : 489 - 492
  • [43] Micro-Raman spectroscopy as a complementary technique to high resolution X-ray diffraction for the characterization of Si1-xGex thin layers
    Durand, Aurele
    Rouchon, Denis
    Le-Cunff, Delphine
    Gergaud, Patrice
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 3, 2015, 12 (03): : 304 - 309
  • [44] Combining RBS and FTIR spectroscopy for the Ge analysis in Si1-xGex single crystals
    Gerhardt, A
    Donecker, J
    Selle, B
    Wollweber, J
    [J]. MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES, 1997, 248-2 : 377 - 380
  • [45] PHOTOLUMINESCENCE SPECTROSCOPY OF LOCALIZED EXCITONS IN SI1-XGEX
    LENCHYSHYN, LC
    THEWALT, MLW
    STURM, JC
    SCHWARTZ, PV
    ROWELL, NL
    NOEL, JP
    HOUGHTON, DC
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (02) : 233 - 238
  • [46] Synthesis and characterization of compositionally graded Si1-xGex layers on Si substrate
    Yu, Z. Q.
    Zhang, Y.
    Wang, C. M.
    Shutthanandan, V.
    Lyubinetsk, I. V.
    Engelhard, M. H.
    Saraf, Ln.
    McCready, D. E.
    Henager, C. H., Jr.
    Nachimuthu, P.
    Thevuthasan, S.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2): : 723 - 726
  • [47] Direct observation of strained substrate in graded Si1-xGex/Si heterostructures
    Tao, M
    Lyding, JW
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (14) : 2020 - 2022
  • [48] STM study of step graded Si1-xGex/Si(001) buffers
    Kummer, M
    Vögeli, B
    Von Känel, H
    [J]. THIN SOLID FILMS, 1998, 336 (1-2) : 100 - 103
  • [49] STM study of step graded Si1-xGex/Si(001) buffers
    Kummer, M
    Vögeli, B
    Von Känel, H
    [J]. THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 100 - 103
  • [50] X-ray scattering investigation of the interfaces in Si/Si1-xGex superlattices on Si(001) grown by MBE and UHV-CVD
    Baribeau, J.-M.
    Lafontaine, H.
    [J]. Thin Solid Films, 1998, 321 : 141 - 147