Ultra-flexible short-channel organic field-effect transistors

被引：16

作者：

Reuveny, Amir ^{[1
,2
]}

Yokota, Tomoyuki ^{[1
,2
]}

Sekitani, Tsuyoshi ^{[1
,2
,3
]}

Someya, Takao ^{[1
,2
]}

机构：

[1] Univ Tokyo, Elect & Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy JST, Exploratory Res Adv Technol ERATO, Bunkyo Ku, Tokyo 1130032, Japan

[3] Osaka Univ, ISIR, Osaka 5670047, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 09期

关键词：

THIN-FILM TRANSISTORS; CIRCUITS; ELECTRONICS; DIELECTRICS; DISPLAYS;

D O I：

10.7567/APEX.8.091601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated extremely flexible short-channel (2 mu m channel length) organic thin-film transistors in a bottom-contact architecture. The transistors demonstrated excellent mechanical stability under systematic bending tests at a bending radius as small as 600 mu m and were durable against severe device crumpling. The mechanical stability benefited from the thinness of the base film (1-mu m-thick parylene diX-SR) and encapsulation as well as the utilization of a self-assembled-layer contact-modified staggered structure with a polymeric gate dielectric. The proposed approach is an important step in realizing flexible large-area sensors and high-frequency ultra-flexible circuits. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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