Anomalous current-voltage and impedance behaviour in heterojunction diode

被引：1

作者：

Dhruv, S. D. ^{[1
]}

Dhruv, D. K. ^{[1
]}

机构：

[1] Charutar Vidya Mandal Univ, Natubhai V Patel Coll Pure & Appl Sci, Anand 388120, Gujarat, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2022年 / 55卷

关键词：

Thin film heterojunction diode; Current-voltage characterization; Capacitance-voltage characterization; Ideality factor; Barrier height; Impedance spectroscopy; ELECTRICAL CHARACTERIZATION; INTERFACE STATES; PERFORMANCE; FABRICATION;

D O I：

10.1016/j.matpr.2022.04.312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This review article focuses on the basics of thin films and the construction of thin film heterojunction diode. The article clarifies various models explaining heterojunction diode's electrical conduction mechanisms. The electrical parameters such as rectification ratio (RR), ideality factor (n), saturation current (I-S), barrier height phi(b)), built-in potential (v(bi)) and carrier concentration (N) are discussed. The conduction mechanism of the diode at lower bias and higher bias discourses in detail. The impedance spectroscopy used to analyze a diode is also pronounced. Copyright (C) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the 9th National Conference on Condensed Matter Physics and Applications.

引用

页码：A1 / A6

页数：6

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