Effect of developer temperature and normality on conventional and chemically amplified photoresist dissolution

The effects of developer temperature on several conventional resists and one chemically amplified resist, and the effects of developer normality on the dissolution behavior of a 248nm chemically amplified resist, are examined using development rate measurements. Using an RDA-790 development rate measurement tool, dissolution rates as a function of dose and depth into the resist were measured. Each data set was analyzed and the performance of rate versus dissolution inhibitor concentration was fit to appropriate models. The variation of these results with developer temperature has led to temperature-depedent characterization of the dissolution modeling parameters. The variation of dissolution rate with developer normality has led to an initial characterization of the normality-dependent dissolution modeling parameters.