Transfer Of GaAs-based Solar Cells Onto Molybdenum And Silicon Substrates

被引:1
|
作者
Tsai, Yu-Li [1 ]
Wu, Chih-Hung [1 ]
Ho, Jei-Li [1 ]
Lai, Chun-Ming [1 ]
机构
[1] Inst Nucl Energy Res, High Concentrat Photovolta Project, Kaohsiung 82151, Taiwan
关键词
ELO; Mo; solar cell; EPITAXIAL LIFT-OFF;
D O I
10.1063/1.4753834
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
An effective way to reduce III-V cell cost is to reuse the original substrate of a cell by epitaxial lift-off (ELO) technique. Among ELO methods, a famous and successful one is a process involving flexible plastic carrier and external mechanical force. In this study, we present another kind of ELO approach that can transfer GaAs-based cells onto rigid and highly thermal conductive carriers such as molybdenum (Mo) and Si without the use of external mechanical force.
引用
下载
收藏
页码:61 / 64
页数:4
相关论文
共 50 条
  • [11] DBL model for GaAs-based solar cells in different outdoor conditions
    S. Mohammadnejad
    Nima Jouyandeh Abkenar
    A. Bahrami
    Indian Journal of Physics, 2013, 87 : 971 - 976
  • [12] The recombination and tunnel current in GaAs-based solar cells: Effect of radiation
    Kalinovsky, VS
    Andreev, VM
    Evstropov, VV
    Khvostikov, VP
    Lantratov, VM
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 765 - 768
  • [13] Characteristics of GaAs-based concentrator cells
    Araki, K
    Yamaguchi, M
    Takamoto, T
    Ikeda, E
    Agui, T
    Kurita, H
    Takahashi, K
    Unno, T
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 66 (1-4) : 559 - 565
  • [14] Resistance to edge recombination in GaAs-based dots-in-a-well solar cells
    Gu, Tingyi
    El-Emawy, Mohamed A.
    Yang, Kai
    Stintz, Andreas
    Lester, Luke F.
    APPLIED PHYSICS LETTERS, 2009, 95 (26)
  • [15] Numerical Study of GaAs-Based Dual Junction Intermediate Band Solar Cells
    Shih, Ching-Yu
    Tan, Ming-Hsuan
    Hsu, Lung-Hsing
    Tsai, Che-Pin
    Lin, Cheng-Chung
    Kuo, Hao-Chung
    Chuang, K. Y.
    Lay, T. S.
    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012, : 1917 - 1921
  • [16] Radiation resistance of MBE-grown GaInP/GaAs-based solar cells
    Kazantsev, AB
    Lammasniemi, J
    Jaakkola, R
    Rajatora, M
    Rauhala, E
    Raisanen, J
    Jain, RK
    Pessa, M
    PROGRESS IN PHOTOVOLTAICS, 1998, 6 (01): : 25 - 33
  • [17] Effects of annealing on the structural properties of GaAs-based quantum well solar cells
    Asar, T.
    Sarikavak, B.
    Ozturk, M. Kemal
    Mammadov, T.
    Ozcelik, S.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (11): : 1627 - 1631
  • [18] Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells
    Donchev, Vesselin
    Milanova, Malina
    COATINGS, 2023, 13 (12)
  • [19] Sonic Lift-off of GaAs-based Solar Cells with Reduced Surface Facets
    Coll, Pablo Guimera
    Neumann, Anica
    Smith, David
    Warren, Emily
    Polly, Stephen
    Hubbard, Seth
    Steiner, Myles A.
    Bertoni, Mariana, I
    2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2021, : 2141 - 2143
  • [20] Materials technologies for making GaAs-based solar cells on low-cost ceramics
    Mauk, MG
    Balliet, JR
    Feyock, BW
    Sulima, OV
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 753 - 756