Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN

被引：0

作者：

Fearton, SJ ^{[1
]}

Vartuli, CB ^{[1
]}

Lee, JW ^{[1
]}

Donovan, SM ^{[1
]}

MacKenzie, JD ^{[1
]}

Abernathy, CR ^{[1
]}

Shul, RJ ^{[1
]}

McLane, GF ^{[1
]}

Ren, F ^{[1
]}

机构：

[1] UNIV FLORIDA,GAINESVILLE,FL 32611

来源：

COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS | 1996年 / 421卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：309 / 314

页数：6

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