Nonmagnetic doping induced quantum anomalous Hall effect in topological insulators

被引:8
|
作者
Qi, Shifei [1 ,2 ,3 ]
Gao, Ruiling [1 ,4 ]
Chang, Maozhi [1 ,4 ]
Hou, Tao [2 ,3 ]
Han, Yulei [2 ,3 ]
Qiao, Zhenhua [2 ,3 ]
机构
[1] Hebei Normal Univ, Dept Phys, Shijiazhuang 050024, Hebei, Peoples R China
[2] Univ Sci & Technol China, ICQD, Hefei Natl Lab Phys Sci Microscale, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China
[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Anhui, Peoples R China
[4] Shanxi Normal Univ, Inst Mat Sci, Linfen 041004, Shanxi, Peoples R China
关键词
REALIZATION; ATOMS; STATE;
D O I
10.1103/PhysRevB.102.085419
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultralow temperatures (usually below 300 mK), which are mainly attributed to inhomogeneous magnetic doping, become a daunting challenge for potential applications. Here, a nonmagnetic-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrate that magnetic moments can be induced by nonmagnetic nitrogen or carbon substitution in Bi2Se3, Bi2Te3, and Sb2Te3, while only nitrogen-doped Sb2Te3 system can exhibit long-range ferromagnetism and preserve large bulk band gaps. We further show that its corresponding thin film can harbor QAHE at temperatures of 17-29 Kelvin, which is two orders of magnitude higher than typical realized temperatures in similar systems. Our proposed nonmagnetic doping scheme may shed light on experimental realization of high-temperature QAHE in topological insulators.
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页数:6
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