Bonding and transferring of carbon nanotube bumps using magnetron sputtering

被引:0
|
作者
Fujino, Masahisa [1 ]
Terasaka, Hidenori [1 ]
Suga, Tadatomo [1 ]
机构
[1] Univ Tokyo, Dept Precis Engn, Bunkyo Ku, Tokyo 1138656, Japan
关键词
ION-IMPLANTATION; RESISTANCE; INTERCONNECTS; DIAMOND; GARNETS;
D O I
10.7567/JJAP.57.02BC02
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bump-shaped carbon nanotubes (CNTs) are expected as substitutional via/bump structures for electronic devices. Moreover, the resistivity of the interconnect between CNTs and metal is relatively higher than that of conventional interconnects. In this research, CNT bumps were bonded to a Au substrate by surface activated bonding (SAB) with Au magnetron sputtering, and the resistance of the CNT bumps was measured. As a result, the Au sputtered on CNT bumps can reduce the interconnect resistance because of the enlarging contact area of CNT/metal and also their conjugation. Moreover, the interconnect resistance of the SAB-processed CNT and Au substrate could be estimated from the difference between their interconnect structures. (C) 2018 The Japan Society of Applied Physics
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页数:5
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