Physical properties of reactive RF sputtered a-IZON thin films

被引：0
|
作者：
Ortega, J. J. [1 ]
Escobedo-Galvan, C. R. [2 ]
Avelar-Munoz, F. [1 ]
Ortiz-Hernandez, A. A. [3 ]
Tototzintle-Huitle, H. [1 ]
Falcony, C. [4 ]
Araiza, J. J. [1 ]
机构：
[1] Univ Autonoma Zacatecas, Unidad Acad Fis, Zacatecas, Mexico
[2] Inst Politecn Nacl, Ctr Estudios Cient & Tecnol 18, Zacatecas, Mexico
[3] Univ Politecn Zacatecas, Dept Ingn Mecatron, Zacatecas, Mexico
[4] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City, DF, Mexico
来源：
REVISTA MEXICANA DE FISICA | 2019年 / 65卷 / 02期
关键词：
Indium zinc oxynitride; amorphous oxynitride; spectral ellipsometry; amorphous semiconductor; IZON; INDIUM ZINC-OXIDE; OXYNITRIDE;
D O I：
10.31349/RevMexFis.65.133
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The physical properties of amorphous indium zinc oxynitride (a-IZON) thin films, which were deposited at room temperature by reactive RF magnetron sputtering, were investigated. The results of the investigations indicated that the a-IZON films possessed excellent qualities: high transparency with a very low resistivity from 10(-3) Omega.cm to 10(-4) Omega.cm, while the carrier concentration showed values over 10(20) cm(-3) with mobility between 10 and 21 cm(2).V-1.s(-1). The incorporated nitrogen reduces the typical crystallization of IZO and favors the deposition of transparent thin films. These results show that the IZON is an ideal amorphous material for applications in transparent and flexible optoelectronic devices.
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收藏
页码：133 / 138
页数：6
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