A High-Power S-Band RF Window for a Klystron

被引:1
|
作者
Barnyakov, A. M. [1 ]
Levichev, A. E. [1 ]
Lider, E. V. [1 ]
Pavlov, O. A. [1 ]
Pivovarov, I. L. [1 ]
Samoylov, S. L. [1 ]
Shvedova, L. Yu. [1 ]
机构
[1] Russian Acad Sci, Budker Inst Nucl Phys, Siberian Branch, 0000 0001 2192 9124, Novosibirsk 630090, Russia
基金
俄罗斯科学基金会;
关键词
D O I
10.1134/S0020441218020112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The calculation, measurements, and testing of a vacuum RF S-band window are described. Vacuum waveguide pillbox-type RF windows at a frequency of 2856 MHz, which were developed and manufactured at the works of the Budker Institute of Nuclear Physics (BINP), make it possible to replace the RF windows of the klystrons that are used in the injection complex of the BINP and can be applied in new designs in the fields of both RF-power sources and accelerator techniques. Tests were performed using 35-MW pulsed power and a pulse duration of 3.8 mu s.
引用
收藏
页码:233 / 238
页数:6
相关论文
共 50 条
  • [31] Development of an S-Band High Average Power Multibeam Klystron With Bandwidth of 10%
    Gao, Dongping
    Zhang, Zhaochuan
    Ding, Yaogen
    Shen, Bin
    Ding, Haibing
    Zhang, Zhiqiang
    Cao, Jing
    Gu, Honghong
    Wang, Caiying
    Wang, Feng
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (01) : 159 - 165
  • [32] DEVELOPMENT OF AN S-BAND RF WINDOW FOR LINEAR COLLIDERS
    MIURA, A
    MATSUMOTO, H
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 334 (2-3): : 341 - 352
  • [33] FORUM ON HIGH-FREQUENCY (S-BAND) HIGH-POWER TRANSISTORS
    FLYNN, G
    [J]. ELECTRONIC PRODUCTS MAGAZINE, 1970, 12 (10): : 27 - &
  • [34] Silicon carbide MESFET's for high-power S-band applications
    Cree Research, Inc, Durham, United States
    [J]. Materials Science Forum, 1998, 264-268 (pt 2): : 953 - 956
  • [35] Silicon carbide MESFET's for high-power S-band applications
    Allen, ST
    Sadler, RA
    Alcorn, TS
    Sumakeris, J
    Glass, RC
    Carter, CH
    Palmour, JW
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 953 - 956
  • [36] Silicon carbide MESFET's for high-power S-band applications
    Allen, ST
    Sadler, RA
    Alcorn, TS
    Palmour, JW
    Carter, CH
    [J]. 1997 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS I-III: HIGH FREQUENCIES IN HIGH PLACES, 1997, : 57 - 60
  • [37] Development of an S-band 50 kW average power klystron
    Zhang Zhao-chuan
    Ding Yao-gen
    Fan Jun-jie
    Guo Yan-fang
    Zhang Yu-wen
    Shen Bin
    Fu Chun-jiu
    Fan Xu-dong
    [J]. 2008 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE, 2008, : 205 - 206
  • [38] Design Of A Multi-Beam Electron Gun For High Power S-Band Klystron
    Joshi, L. M.
    Nandy, Parth Sarthi
    Karim, Rezaul
    Kant, Deependeir
    Pal, Debaisish
    Nangru, S. C.
    Lamba, O. S.
    Ghildiyal, Ashok
    Verma, M. K.
    [J]. INTERNATIONAL CONFERENCE ON RECENT ADVANCES IN MICROWAVE THEORY AND APPLICATIONS, PROCEEDINGS, 2008, : 188 - 189
  • [39] Progress of an S-band High Average Power Broadband Multi-beam Klystron
    Gao, Dongping
    Ding, Yaogen
    Zhang, Zhaochuan
    Shen, Bin
    Zhang, Zhiqiang
    Cao, Jin
    Gu, Honghong
    Wang, Caiying
    Wang, Feng
    [J]. IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE, 2014, : 117 - 118
  • [40] Development and performance test of a new high power RF window in S-band PLS-II LINAC
    Woon-Ha Hwang
    Young-Do Joo
    Seung-Hwan Kim
    Jae-Young Choi
    Sung-Ju Noh
    Ji-Wan Ryu
    Young-Ki Cho
    [J]. Journal of the Korean Physical Society, 2017, 71 : 802 - 806