Modeling on the Ground Wafer Shape in Wafer Rotational Grinding

During the silicon wafer grinding, the different process parameters could cause the silicon wafer shape greatly different. Based on the rotational coordinate principle of kinematics, a theoretical model of the ground wafer shape in rotational grinding process is developed, in which many critical factors are considered in this paper. These factors mainly include the parameters of the dressing vacuum chuck and wafer grinding etc. And the mathematical equation of the ground wafer shape is derived. Moreover, as one of the important indexes, TTV(total thickness variation) is researched and analyzed. The equation of TTV is given. The built model can offer a theoretical foundation for further experimental researching. The research results are significant to effectively control the ground wafer shape in a certain.