A Silicon Single-Electron Pump with Tunable Electrostatic Confinement

被引：0

作者：

Rossi, A. ^{[1
]}

Tanttu, T. ^{[2
]}

Tan, K. Y. ^{[2
]}

Zhao, R. ^{[1
]}

Chan, K. W. ^{[1
]}

Iisakka, I. ^{[3
]}

Tettamanzi, G. C. ^{[4
,5
]}

Rogge, S. ^{[4
,5
]}

Dzurak, A. S. ^{[1
]}

Mottonen, M. ^{[2
]}

机构：

[1] Univ New South Wales, Sch Elect Engn & Telecommun, Sydney, NSW 2052, Australia

[2] Aalto Univ, COMP Ctr Excellence, QCD Labs, Dept Appl Phys, Aalto 00076, Finland

[3] Ctr Metrol & Accreditat MIKES, Espoo 02151, Finland

[4] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia

[5] Univ New South Wales, ARC Ctr CQC2T, Sydney, NSW 2052, Australia

来源：

2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2014年

基金：

芬兰科学院; 澳大利亚研究理事会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the stability of the pumping mechanisms can be dramatically enhanced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million (ppm).

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