A new loadless 4-transistor SRAM cell with a 0.18 μm CMOS technology

被引：0
|
作者：
Yang, Jinshen [1 ]
Chen, Li [2 ]
机构：
[1] Tianjin Univ, Dept Commun Engn, Tianjin 300072, Peoples R China
[2] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK, Canada
来源：
2007 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-3 | 2007年
关键词：
SRAM cells; 4-T; high density; low-power;
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper introduces a new four transistor (4T) SRAM cell for very high density embedded SRAM applications. Compared to a 4T cell introduced previously, the new cells have the bitlines precharged to ground rather than Vdd. The cell is new stable operating at 1.8V. A comparative analysis of the new 4T cell with other 4T loadless SRAM cells and conventional 6T SRAM cells is performed. Using a 0.18 mu m CMOS technology, this cell consumes less power with less area.
引用
收藏
页码：538 / 541
页数：4
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