Si-doping in GaN grown by metal-organic vapor phase epitaxy using tetraethylsilane

被引：11

作者：

Kaneda, N

Detchprohm, T

Hiramatsu, K

Sawaki, N

机构：

[1] Nagoya Univ, Nagoya, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 4B期

关键词：

GaN; tetraethylsilane (TeESi); Si-doping; liquid source; photoluminescence (PL); LAYER; MOVPE;

D O I：

10.1143/JJAP.35.L468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Si-doped GaN layer was grown by MOVPE (metal-organic vapor phase epitaxy) using tetraethylsilane (TeESi) as the dopant. The Hall effect was studied between 11 K and 300 K. The electron concentration was observed to increase with the increase in the TeESi flow rate. The activation energy E(D) for ionization of shallow donors was determined to be 27 meV.

引用

页码：L468 / L470

页数：3

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