Current self-oscillations in photoexcited type-II GaAs-AlAs superlattices

被引:18
|
作者
Hosoda, M
Mimura, H
Ohtani, N
Tominaga, K
Watanabe, T
Fujiwara, K
Grahn, HT
机构
[1] KYUSHU INST TECHNOL, DEPT ELECT ENGN, TOBATA KU, KITAKYUSHU, FUKUOKA 804, JAPAN
[2] TOKYO INST TECHNOL, RES CTR QUANTUM EFFECT ELECT, MEGURO KU, TOKYO 152, JAPAN
[3] PAUL DRUDE INST FESTKORPERELEKT, D-10117 BERLIN, GERMANY
关键词
D O I
10.1063/1.117766
中图分类号
O59 [应用物理学];
学科分类号
摘要
Self-oscillations of the photocurrent have been observed in type-II GaAs-AlAs superlattices. In addition to the fundamental frequency, several higher harmonics are present. The frequency of the oscillations can be tuned for a fixed carrier density from 15 to 120 MHz by simply changing the applied bias. The frequency distribution within a certain voltage range can be varied by changing the density of photoexcited carriers. For larger carrier densities, higher frequencies are observed in a different voltage range. This system could therefore be used as a high-frequency oscillator, which can be controlled by two external parameters, the applied voltage and the light intensity. (C) 1996 American Institute of Physics.
引用
收藏
页码:500 / 502
页数:3
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