Abelian Chern-Simons theory for the fractional quantum Hall effect in graphene

被引:5
|
作者
Fraessdorf, Christian [1 ,2 ]
机构
[1] Free Univ Berlin, Dahlem Ctr Complex Quantum Syst, Arnimallee 14, D-14195 Berlin, Germany
[2] Free Univ Berlin, Inst Theoret Phys, Arnimallee 14, D-14195 Berlin, Germany
关键词
COMPOSITE FERMIONS; MAGNETIC-FIELD; LANDAU-LEVEL; ELECTRONIC-PROPERTIES; STATES; MAGNETOTRANSPORT; POLARIZATION; OSCILLATIONS; EXCITATIONS; POTENTIALS;
D O I
10.1103/PhysRevB.97.115123
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We develop a theory for the pseudorelativistic fractional quantum Hall effect in graphene, which is based on a multicomponent Abelian Chern-Simons theory in the fermionic functional integral approach. Calculations are performed in the Keldysh formalism, directly giving access to real-time correlation functions at finite temperature. We obtain an exact effective action for the Chern-Simons gauge fields, which is expanded to second order in the gauge field fluctuations around the mean-field solution. The one-loop fermionic polarization tensor as well as the electromagnetic response tensor in random phase approximation are derived, from which we obtain the Hall conductivities for various FQH states, lying symmetrically around charge neutrality.
引用
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页数:20
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