Electron emission characteristics of polycrystalline diamond films

被引:0
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作者
Sugino, T
Kawasaki, S
Yokota, Y
Iwasaki, Y
Shirafuji, J
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electron emission characteristics have been investigated for polycrystalline diamond films. O-2 plasma treatment or annealing of the diamond surface leads to an increase of the electric field commencing electron emission in comparison with that for H-2 plasma treated one. Emission characteristics are recovered by H-2 plasma treatment after O-2 plasma treatment or annealing. An increase of the electric field also occurs for diamond /Au samples in which the rear face of the diamond film is treated with O-2 plasma or annealed. However, MO recovery of the electric field occurs even though H-2 plasma treatment is carried out at the rear face after O-2 plasma treatment or annealing. It is demonstrated that there exists another factor dominating the field emission characteristic other than field emission mechanisms such as electron injection at the diamond/metal contact and electron emission at the surface with negative electron affinity.
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页码:513 / 517
页数:5
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