A two-dimensional phononic crystal (PnC) that can operate in the GHz range is created in a freestanding silicon substrate using NanoFIBrication (using a focused ion beam (FIB) to fabricate nanostructures). First, a simple cubic 6.75 x 6.75 mu m array of vias with 150 nm spacing is generated. After patterning the vias, they are backfilled with void-free tungsten scatterers. Each via has a diameter of 48 nm. Numerical calculations predict this 2D PnC will generate a band gap near 22 GHz. A protective layer of chromium on top of the thin (100 nm) silicon membrane confines the surface damage to the chromium, which can be removed at a later time. Inspection of the underside of the membrane shows the vias flaring out at the exit, which we are dubbing the 'trumpet effect'. The trumpet effect is explained by modeling the lateral damage in a freestanding membrane.
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South China Univ Technol, Sch Phys, Guangzhou 510640, Peoples R ChinaKing Abdullah Univ Sci & Technol KAUST, Div Comp Elect & Math Sci & Engn CEMSE, Thuwal 239556900, Saudi Arabia
Mei, Jun
Ma, Guancong
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Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R ChinaKing Abdullah Univ Sci & Technol KAUST, Div Comp Elect & Math Sci & Engn CEMSE, Thuwal 239556900, Saudi Arabia
Ma, Guancong
Wu, Ying
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King Abdullah Univ Sci & Technol KAUST, Div Comp Elect & Math Sci & Engn CEMSE, Thuwal 239556900, Saudi Arabia
King Abdullah Univ Sci & Technol KAUST, Div Phys Sci & Engn PSE, Thuwal 239556900, Saudi ArabiaKing Abdullah Univ Sci & Technol KAUST, Div Comp Elect & Math Sci & Engn CEMSE, Thuwal 239556900, Saudi Arabia
机构:
Cent S Univ, Sch Phys & Technol, Changsha 410083, Peoples R China
Cent S Univ, Powder Met Res Inst, Changsha 410083, Peoples R ChinaCent S Univ, Sch Phys & Technol, Changsha 410083, Peoples R China
Li Xiao-Chun
Gao Jun-Li
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Cent S Univ, Sch Phys & Technol, Changsha 410083, Peoples R ChinaCent S Univ, Sch Phys & Technol, Changsha 410083, Peoples R China
Gao Jun-Li
Liu Shao-E
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Cent S Univ, Sch Phys & Technol, Changsha 410083, Peoples R ChinaCent S Univ, Sch Phys & Technol, Changsha 410083, Peoples R China
Liu Shao-E
Zhou Ke-Chao
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Cent S Univ, Powder Met Res Inst, Changsha 410083, Peoples R ChinaCent S Univ, Sch Phys & Technol, Changsha 410083, Peoples R China
Zhou Ke-Chao
Huang Bo-Yun
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Cent S Univ, Powder Met Res Inst, Changsha 410083, Peoples R ChinaCent S Univ, Sch Phys & Technol, Changsha 410083, Peoples R China
机构:
Hokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, JapanHokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, Japan
Profunser, Dieter M.
Muramoto, Eiji
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Hokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, JapanHokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, Japan
Muramoto, Eiji
Matsuda, Osamu
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Hokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, JapanHokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, Japan
Matsuda, Osamu
Wright, Oliver B.
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Hokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, JapanHokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, Japan
Wright, Oliver B.
Lang, Udo
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Swiss Fed Inst Technol, Ctr Mech, CH-8092 Zurich, SwitzerlandHokkaido Univ, Grad Sch Engn, Div Appl Phys, Sapporo, Hokkaido 0608628, Japan
机构:
S China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
Nanjing Univ, Dept Phys, Inst Acoust, Lab Modern Acoust,MOE, Nanjing 210093, Jiangsu, Peoples R ChinaS China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
Li, Yong
Hou, Zhilin
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S China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R ChinaS China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
Hou, Zhilin
Oudich, Mourad
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Nancy Univ, CNRS, UMR 7198, Inst Jean Lamour, F-54506 Vandoeuvre Ls Nancy, FranceS China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
Oudich, Mourad
Assouar, M. Badreddine
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Nancy Univ, CNRS, UMR 7198, Inst Jean Lamour, F-54506 Vandoeuvre Ls Nancy, France
Georgia Inst Technol, CNRS GIT, Int Joint Lab, UMI 2958, Atlanta, GA 30332 USAS China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China