Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

被引：39
|
作者：
Miwa, Shinji [1 ]
Matsuda, Kensho [1 ]
Tanaka, Kazuhito [1 ]
Kotani, Yoshinori [2 ]
Goto, Minori [1 ]
Nakamura, Tetsuya [2 ]
Suzuki, Yoshishige [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[2] Japan Synchrotron Radiat Res Inst, SPring 8, Sayo, Hyogo 6795198, Japan
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 16期
关键词：
MAGNETOCRYSTALLINE ANISOTROPY; MICROSCOPIC ORIGIN; ATOMIC LAYERS; TRANSITION; DRIVEN;
D O I：
10.1063/1.4934568
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe vertical bar MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe vertical bar MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe vertical bar MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O2- migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe vertical bar MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field. (C) 2015 AIP Publishing LLC.
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页数：4
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