Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs

被引：4

作者：

Yun, JG ^{[1
]}

Cristoloveanu, S

Bawedin, M

Flandre, D

Lee, HD

机构：

[1] Chungnam Natl Univ, Dept Elect Engn, Taejon 305764, South Korea

[2] Inst Microelect Electromagnetism & Photon, F-38016 Grenoble, France

[3] Catholic Univ Louvain, Microelect Lab, B-1348 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 02期

关键词：

abnormal drain current (ADC) effect; band-to-band (B-B) and band-to-defect (B-D) tunneling; floating body effect (FBE); fully depleted (FD) SOI MOSFETs; gate-induced drain; leakage (GIDL) current; interface coupling; meta-stable dip (MSD) effect; transient effect;

D O I：

10.1109/LED.2005.862684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of abnormal drain current (ADC) effect in fully depleted (FD) silicon-on-insulator (SOI) MOSFETs is reported. It is found that the drain current becomes abnormally large for specific front- and back-gate voltages. The drain current exhibits a transient effect due to the floating body behavior and no longer follows the conventional interface coupling theory for these specific front- and back-gate bias conditions. It is shown that the ADC can be generated by the combination of gate-induced drain leakage, transient effects, and parasitic bipolar transistor action in FD SOI MOSFETs.

引用

页码：123 / 126

页数：4

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