Controlling the charge of a specific surface atom by the addition of a non-site-specific single impurity in a Si nanocrystal

被引：11
|
作者：
Blomquist, T [1 ]
Kirczenow, G [1 ]
机构：
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
来源：
NANO LETTERS | 2006年 / 6卷 / 01期
关键词：
D O I：
10.1021/nl051995s
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We show, by use of self-consistent calculations, that the charge on a radical surface site (RSS) on a hydrogen-terminated silicon nanocrystal can be controlled by the addition of a non-site-specific dopant atom. An RSS is a surface defect where the H-termination is missing. This new effect has important implications for future hybrid semiconductor/molecular nanoelectronics. We also calculate the energy and wave function of the RSS state and its nanoscale interactions with the dopant atom.
引用
收藏
页码：61 / 65
页数：5
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