Structures, Stabilities, and Electronic Properties of Small-Sized Zr2Sin (n=1-11) Clusters: A Density Functional Study

被引:7
|
作者
Wu, Jing-He [3 ]
Liu, Chang-Xin [3 ]
Wang, Ping [1 ]
Zhang, Shuai [1 ]
Yang, Gui [2 ]
Lu, Cheng [1 ]
机构
[1] Nanyang Normal Univ, Dept Phys, Nanyang 473061, Peoples R China
[2] Anyang Normal Univ, Dept Phys & Elect Engn, Anyang 455000, Peoples R China
[3] Henan Inst Educ, Dept Phys, Zhengzhou 450046, Peoples R China
基金
中国国家自然科学基金;
关键词
Density Functional Method; Electronic Properties; Geometrical Structures; Zr2Sin Clusters; SILICON CLUSTERS; MAGNETIC-PROPERTIES; TRANSITION-METAL; GROWTH-PATTERNS; AB-INITIO; GEOMETRIES;
D O I
10.1515/zna-2015-0261
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ab initio methods based on density functional theory at B3LYP level have been applied in investigating the equilibrium geometries, growth patterns, relative stabilities, and electronic properties of Zr-2-doped Si-n clusters. The optimisation results shown that the lowest-energy configurations for Zr2Sin clusters do not keep the corresponding silicon framework unchanged, which reflects that the doped Zr atoms dramatically affect the most stable structures of the Si-n clusters. By analysing the relative stabilities, it is found that the doping of zirconium atoms reduces the chemical stabilities of silicon host. The Zr2Si4 and Zr2Si7 clusters are the magic numbers. The natural population and natural electronic configuration analyses indicated that the Zr atoms possess positive charge for n = 1-6 and negative charge for n = 7-11. In addition, the chemical hardness, chemical potential, infrared, and Raman spectra are also discussed.
引用
收藏
页码:805 / 814
页数:10
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