Growth and properties of III-V compound semiconductor heterostructure nanowires (vol 26, 014035, 2011)

被引：3
|
作者：
Gao, Q. [1 ]
Tan, H. H. [1 ]
Jackson, H. E. [2 ]
Smith, L. M. [2 ]
Yarrison-Rice, J. M. [3 ]
Zou, Jin [4 ,5 ]
Jagadish, C. [1 ]
机构：
[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA
[3] Miami Univ, Dept Phys, Oxford, OH 45056 USA
[4] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia
[5] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 05期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1088/0268-1242/27/5/059501
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
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