Alternate gate oxides for silicon MOSFETs using high-K dielectrics

被引：25

作者：

Billman, CA ^{[1
]}

Tan, PH ^{[1
]}

Hubbard, KJ ^{[1
]}

Schlom, DG ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS | 1999年 / 567卷

关键词：

D O I：

10.1557/PROC-567-409

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

High K (dielectric constant) and silicon-compatibility are essential for an alternative gate dielectric for use in silicon MOSFETs. Thermodynamic data were used to comprehensively evaluate the thermodynamic stability of binary oxides and binary nitrides in contact with silicon at 1000 K. Using the Clausius-Mossotti equation and ionic polarizabilities, the K of all known inorganic compounds composed of Si-compatible binary oxides was estimated. A ranked list of alternate gate oxide candidates that are likely to possess both high K and silicon-compatibility is given.

引用

页码：409 / 414

页数：6

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