Vertical GaN Junction Barrier Schottky Diodes

被引：42

作者：

Koehler, Andrew D. ^{[1
]}

Anderson, Travis J. ^{[1
]}

Tadjer, Marko J. ^{[1
]}

Nath, Anindya ^{[2
]}

Feigelson, Boris N. ^{[1
]}

Shahin, David I. ^{[3
]}

Hobart, Karl D. ^{[1
]}

Kub, Francis J. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

[2] George Mason Univ, Fairfax, VA 22030 USA

[3] Univ Maryland, College Pk, MD 20742 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 01期

关键词：

ACTIVATION;

D O I：

10.1149/2.0041701jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertical GaN junction barrier Schottky (JBS) diodes are demonstrated. The JBS p-type grid was formed by Mg-implantation into a 10 mu m thick unintentionally doped GaN homoepitaxial drift layer, grown by metal organic chemical vapor deposition (MOCVD). Then, symmetrical multi-cycle rapid thermal annealing (SMRTA) repaired implantation damage and activated the Mg ions. This process includes deposition of an AlN capping layer, annealing in a nitrogen overpressure, and rapid heating and cooling pulsed annealing. In addition, PiN diodes and Schottky barrier diodes (SBDs) were fabricated on the same substrate for comparison. The JBS diode demonstrates forward conduction characteristics dominated by the Schottky barrier (turn-on voltage similar to 0.5 V), and reverse breakdown voltage comparable to the PiN diode (-610 V). (C) 2016 The Electrochemical Society.

引用

页码：Q10 / Q12

页数：3

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