Mature InAs quantum dots on the GaAs(114)A surface

被引：14
|
作者：
Xu, MC [1 ]
Temko, Y [1 ]
Suzuki, T [1 ]
Jacobi, K [1 ]
机构：
[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 13期
关键词：
D O I：
10.1063/1.1691196
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InAs quantum dots (QDs), grown by molecular-beam epitaxy on GaAs(114)A surfaces, were studied in situ by atomically resolved scanning tunneling microscopy. At their mature stage, the QDs present a complicated but regular shape being bound by flat {110}, (111)A; and {2511}A facets, and a steep part composed of rather variable combinations of {110} ,(111)A, {(1) over bar(1) over bar(1) over bar }B, and {2511} surfaces. The QD shape can be derived from mature InAs QDs on GaAs(001). (C) 2004 American Institute of Physics.
引用
收藏
页码：2283 / 2285
页数：3
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