Sub-picosecond all-optical switch with extinction ratio of 10 dB utilizing GaN intersubband transition

被引：0
|
作者：
Iizuka, N [1 ]
Kaneko, K [1 ]
Suzuki, N [1 ]
机构：
[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
来源：
2005 CONFERENCE ON LASERS & ELECTRO-OPTICS (CLEO), VOLS 1-3 | 2005年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An all-optical gate switch utilizing intersubband transition in GaN/AIN quantum wells was fabricated by MBE re-growth on an MOCVD-grown GaN. The extinction ratio of 10 dB was achieved with the gate width of 240 fs. (c) 2005 Optical Society of America
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页码：731 / 733
页数：3
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