Large-energy, narrow-bandwidth laser pulse at 1645 nm in a diode-pumped Er:YAG solid-state laser passively Q-switched by a monolayer graphene saturable absorber

被引:33
|
作者
Zhou, Rong [1 ]
Tang, Pinghua [1 ]
Chen, Yu [1 ]
Chen, Shuqing [1 ]
Zhao, Chujun [1 ]
Zhang, Han [1 ]
Wen, Shuangchun [1 ]
机构
[1] Hunan Univ, Coll Phys & Microelect Sci, Minist Educ, Key Lab Micro Nano Optoelect Devices, Changsha 410082, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
DOPED FIBER LASER; MU-M; HIGHLY EFFICIENT; CONTINUOUS-WAVE; MODE-LOCKING; QUALITY;
D O I
10.1364/AO.53.000254
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Nonlinear transmission parameters of monolayer graphene at 1645 nm were obtained. Based on the monolayer graphene saturable absorber, a 1532 nm LD pumped 1645 nm passively Q-switched Er:YAG laser was demonstrated. Under the pump power of 20.8 W, a 1645 nm Q-switched pulse with FWHM of 0.13 nm (without the use of etalon) and energy of 13.5 mu J per pulse can be obtained. To the best of our knowledge, this is the highest pulse energy for graphene-based passively Q-switched Er: YAG laser operating at 1645 nm, suggesting the potentials of graphene materials for high-energy solid-state laser applications. (C) 2014 Optical Society of America
引用
收藏
页码:254 / 258
页数:5
相关论文
共 50 条
  • [1] Passively Q-switched diode-pumped Er:YAG solid-state laser
    Aubourg, Adrien
    Didierjean, Julien
    Aubry, Nicolas
    Balembois, Francois
    Georges, Patrick
    [J]. OPTICS LETTERS, 2013, 38 (06) : 938 - 940
  • [2] Diode-pumped, narrow-linewidth, linearly polarized, passively Q-switched 1645 nm Er:YAG laser
    Yu, Zhenzhen
    Wang, Mingjian
    Hou, Xia
    Chen, Weibiao
    [J]. CHINESE OPTICS LETTERS, 2015, 13 (07)
  • [3] Diode-pumped, narrow-linewidth, linearly polarized,passively Q-switched 1645 nm Er:YAG laser
    于真真
    王明建
    侯霞
    陈卫标
    [J]. Chinese Optics Letters, 2015, 13 (07) : 79 - 82
  • [4] Diode-pumped passively Q-switched 916 nm laser with a Cr4+:YAG saturable absorber
    Gao, Jing
    Yan, Renpeng
    Yu, Xin
    [J]. OPTICS COMMUNICATIONS, 2014, 313 : 401 - 405
  • [5] Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber
    Li, Chun
    Leng, Yuxin
    Huo, Jinjin
    [J]. APPLIED SCIENCES-BASEL, 2018, 8 (10):
  • [6] AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser
    Huang, S. C.
    Liu, S. C.
    Li, A.
    Su, K. W.
    Chen, Y. F.
    Huang, K. F.
    [J]. OPTICS LETTERS, 2007, 32 (11) : 1480 - 1482
  • [7] Diode-pumped passively Q-switched Yb:YAG microchip laser with a GaAs as saturable absorber
    Zhang, QL
    Feng, BH
    Zhang, DX
    Fu, PM
    Zhang, ZG
    Zhao, ZW
    Deng, PZ
    Jun, X
    Xu, XD
    Wang, YG
    Ma, XY
    [J]. CHINESE PHYSICS LETTERS, 2003, 20 (10) : 1741 - 1743
  • [8] Diode-pumped passively Q-switched Nd: YAG ceramic laser with GaAs saturable absorber
    Xie, Guoqiang
    Tang, Dingyuan
    Kong, Jian
    Qian, Liejia
    [J]. JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, 2007, 9 (07): : 621 - 625
  • [9] Diode-pumped and passively Q-switched Er:YAG laser emitting at 1617 nm
    Aubourg, Adrien
    Didierjean, Julien
    Aubry, Nicolas
    Balembois, Francois
    Georges, Patrick
    [J]. SOLID STATE LASERS XXIII: TECHNOLOGY AND DEVICES, 2014, 8959
  • [10] Diode pumped Er:YAG single crystal fiber laser passively Q-switched with Cr:ZnSe saturable absorber emitting at 1645 nm or 1617 nm
    Aubourg, Adrien
    Didierjean, Julien
    Aubry, Nicolas
    Balembois, Francois
    Georges, Patrick
    [J]. 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE AND INTERNATIONAL QUANTUM ELECTRONICS CONFERENCE (CLEO EUROPE/IQEC), 2013,