AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laser

被引：12
|
作者：
Huang, S. C. [1 ]
Liu, S. C. [1 ]
Li, A. [1 ]
Su, K. W. [1 ]
Chen, Y. F. [1 ]
Huang, K. F. [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu, Taiwan
来源：
OPTICS LETTERS | 2007年 / 32卷 / 11期
关键词：
D O I：
10.1364/OL.32.001480
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped 1.06 mu m laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of 13.5 W, an average output power of 3.5 W with a Q-switched pulse width of 0.9 ns at a pulse repetition rate of 110 kHz was obtained. (c) 2007 Optical Society of America.
引用
收藏
页码：1480 / 1482
页数：3
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