Experimental Study of Random Telegraph Noise in Trigate Nanowire MOSFETs

被引：6

作者：

Ota, Kensuke ^{[1
]}

Saitoh, Masumi ^{[1
]}

Tanaka, Chika ^{[1
]}

Matsushita, Daisuke ^{[1
]}

Numata, Toshinori ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Adv LSI Technol Lab, Kawasaki, Kanagawa 2128582, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 11期

关键词：

Random telegraph noise (RTN); silicon nanowire transistor (NW Tr.); silicon-on-insulator (SOI); BIAS TEMPERATURE INSTABILITY; DEGRADATION; MODEL; 1/F;

D O I：

10.1109/TED.2015.2471840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Random telegraph noise (RTN) in trigate nanowire transistors (NW Tr.) is systematically studied with respect to the NW size dependence. Time to capture and emission, which is related to the characteristic of the traps, such as trap energy, is independent of NW size. On the other hand, noise amplitude increases as the NW size decreases showing the similar size dependence to the reported scaled planar Tr. In addition, RTN after hot-carrier injection (HCI) and negative bias stress (NBS) is studied. HCI and NBS induce additional carrier traps, which generate larger noise signals. Since the degradation by HCI or NBS is larger with narrower width, RTN after these stresses is found to be severer in the NW Tr.

引用

页码：3799 / 3804

页数：6

共 50 条

[1] Random Dopant Fluctuation and Random Telegraph Noise in Nanowire and Macaroni MOSFETs
Spinelli, Alessandro S.
Compagnoni, Christian Monzio
Lacaita, Andrea L.
[J]. 2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2018, : 230 - 233
[2] Variability Effects in Nanowire and Macaroni MOSFETs-Part II: Random Telegraph Noise
Spinelli, Alessandro S.
Compagnoni, Christian
Lacaita, Andrea L.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (04) : 1492 - 1497
[3] RANDOM TELEGRAPH NOISE OF DEEP-SUBMICROMETER MOSFETS
HUNG, KK
KO, PK
HU, CM
CHENG, YC
[J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) : 90 - 92
[4] Experimental Characterization of the Random Telegraph Noise Signature in MOSFETs Under the Influence of Magnetic Fields
Huerta, Oscar
Marquez, Carlos
Tec-Chim, Adrian I.
Guarin, Fernando
Gutierrez-D., Edmundo A.
Gamiz, Francisco
[J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (07) : 1054 - 1057
[5] Experimental Study of Self-Heating Effects in Trigate Nanowire MOSFETs Considering Device Geometry
Ota, Kensuke
Saitoh, Masumi
Tanaka, Chika
Nakabayashi, Yukio
Numata, Toshinori
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) : 3239 - 3242
[6] Trigate nanowire MOSFETs analog figures of merit
Kilchytska, V.
Makovejev, S.
Barraud, S.
Poiroux, T.
Raskin, J. -P.
Flandre, D.
[J]. SOLID-STATE ELECTRONICS, 2015, 112 : 78 - 84
[7] Nanowire quantum effects in trigate SOI mosfets
Colinge, Jean-Pierre
[J]. NANOSCALED SEMICONDUCTOR-ON-INSULATOR STRUCTURES AND DEVICES, 2007, : 129 - 142
[8] RANDOM TELEGRAPH NOISE OF DEEP-SUBMICROMETER MOSFETS - COMMENT
HUNG, KK
KO, PK
HU, CM
CHENG, YC
[J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (08) : 353 - 353
[9] Systematic method for electrical characterization of random telegraph noise in MOSFETs
Marquez, Carlos
Rodriguez, Noel
Gamiz, Francisco
Ohata, Akiko
[J]. SOLID-STATE ELECTRONICS, 2017, 128 : 115 - 120
[10] Statistics of random telegraph noise in sub-μm MOSFETS
Mueller, HH
Schulz, M
[J]. NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE, 1997, : 195 - 200

← 1 2 3 4 5 →