Insulator-metal Transition in Diluted Magnetic Semiconductor Pb1-x-ySnxVyTe under Pressure

被引：0

作者：

Skipetrov, E. P. ^{[1
]}

Golovanov, A. N. ^{[1
]}

Kovalev, B. B. ^{[1
]}

Skipetrova, L. A. ^{[1
]}

Mousalitin, A. M. ^{[2
]}

Slynko, E. I. ^{[3
]}

Slynko, V. E. ^{[3
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

[2] Moscow Inst Steel & Alloys, Moscow 119049, Russia

[3] Inst Mat Sci Problems, UA-58001 Chernovtsy, Ukraine

来源：

MAGNETISM AND MAGNETIC MATERIALS V | 2012年 / 190卷

基金：

俄罗斯基础研究基金会;

关键词：

Diluted magnetic semiconductors; IV-VI semiconductors; vanadium impurity level; electronic structure; hydrostatic pressure; insulator-metal transition; STATES; CR;

D O I：

10.4028/www.scientific.net/SSP.190.566

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The galvanomagnetic properties in weak magnetic fields (4.2 <= T <= 300 K, B <= 0.07 T) as well as Shubnikov-de Haas effect (T=4.2 K, B <= 7 T) in the single crystal Pb1-x-ySnxVyTe (x=0.20, y approximate to 0.01) under hydrostatic compression up to 15 kbar have been investigated. It is shown that under pressure the decrease of activation energy of vanadium deep level, n-p-inversion of the conductivity type at low temperatures and insulator-metal transition take place. In the metallic phase sharp increase of the Hall mobility and appearance of Shubnikov-de Haas oscillations at helium temperature are observed. The pressure coefficient of vanadium level energy is determined and the diagram of the electronic structure rearrangement for Pb1-x-ySnxVyTe under pressure is proposed.

引用

页码：566 / +

页数：2

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