Electronic structure of Ga1-x Al x As nanostructures grown on the GaAs surface by ion implantation

被引：7
|
作者：
Donaev, S. B. [1 ]
Umirzakov, B. E. [1 ]
Tashmukhamedova, D. A. [1 ]
机构：
[1] Tashkent State Tech Univ, Tashkent 100095, Uzbekistan
来源：
TECHNICAL PHYSICS | 2015年 / 60卷 / 10期
关键词：
GaAs; Molecular Beam Epitaxy; GaAs Surface; Nanocrystalline Phase; GaAs Film;
D O I：
10.1134/S1063784215100138
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The surface morphology and electronic properties of nanocrystalline phases and 2-7-nm-thick Ga1-x Al (x) As films grown on the GaAs(111) surface by Al+ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap E (g) of the Ga0.5Al0.5As nanocrystalline surface phase 25-30 nm in size equals 2.8-2.9 eV.
引用
收藏
页码：1563 / 1566
页数：4
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