Synthesis of SnO2-ZnO Core-Shell Nanowires and Their Optoelectronic Properties

被引：23

作者：

Pan, Ko-Ying ^{[1
]}

Lin, Yu-Hung ^{[1
]}

Lee, Po-Sheng ^{[1
]}

Wu, Jyh-Ming ^{[2
]}

Shih, Han C. ^{[1
,3
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 407, Taiwan

[3] Chinese Culture Univ, Inst Mat Sci & Nanotechnol, Taipei 111, Taiwan

来源：

JOURNAL OF NANOMATERIALS | 2012年 / 2012卷

关键词：

ATOMIC LAYER DEPOSITION; PHOTON-SENSING PROPERTIES; ZNO NANOWIRES; GAS; NANORODS; SENSORS;

D O I：

10.1155/2012/279245

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zinc oxides deposited on Tin dioxide nanowires have been successfully synthesized by atomic layer deposition (ALD). The diameter of SnO2-ZnO core-shell nanowires is 100 nm by ALD 200 cycles. The result of electricity measurements shows that the resistance of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 925 Omega, which is much lower than pure SnO2 nanowires (3.6 x 10(6) Omega). The result of UV light test shows that the recovery time of SnO2-ZnO core-shell nanowires (ALD: 200 cycles) is 328 seconds, which is lower than pure SnO2 nanowires (938 seconds). These results demonstrated that the SnO2-ZnO core-shell nanowires have potential application as UV photodetectors with high photon-sensing properties.

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页数：6

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