In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

被引：53
|
作者：
Bertaud, Thomas [1 ]
Sowinska, Malgorzata [1 ]
Walczyk, Damian [1 ]
Thiess, Sebastian [2 ]
Gloskovskii, Andrei [3 ]
Walczyk, Christian [1 ]
Schroeder, Thomas [1 ,4 ]
机构：
[1] IHP, D-15236 Frankfurt, Oder, Germany
[2] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany
[3] Johannes Gutenberg Univ Mainz, Inst Analyt & Anorgan Chem, D-55128 Mainz, Germany
[4] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期
关键词：
IMPACT;
D O I：
10.1063/1.4756897
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistive switching in Ti/HfO2/TiN was investigated in-operando by hard x-ray photoelectron spectroscopy. In comparison with the virgin-state, ON- and OFF-states show enhanced Ti/TiOx/HfO2 interface oxidation, resulting from an oxygen-gettering activity of Ti. The formed TiOx layer acts in the resistive switching process as an oxygen reservoir in exchange with the non-stoichiometric HfO2-delta. A Ti1+/Ti3+ valence change redox reaction occurs between OFF-and ON-states. The peak shifts are attributed to space charge potentials created by the varying oxygen vacancy concentration at the interface. A push-pull model of oxygen vacancies as a function of voltage polarity is proposed to describe the mechanism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756897]
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页数：5
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