In-operando and non-destructive analysis of the resistive switching in the Ti/HfO2/TiN-based system by hard x-ray photoelectron spectroscopy

被引：53
|
作者：
Bertaud, Thomas [1 ]
Sowinska, Malgorzata [1 ]
Walczyk, Damian [1 ]
Thiess, Sebastian [2 ]
Gloskovskii, Andrei [3 ]
Walczyk, Christian [1 ]
Schroeder, Thomas [1 ,4 ]
机构：
[1] IHP, D-15236 Frankfurt, Oder, Germany
[2] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany
[3] Johannes Gutenberg Univ Mainz, Inst Analyt & Anorgan Chem, D-55128 Mainz, Germany
[4] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期
关键词：
IMPACT;
D O I：
10.1063/1.4756897
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistive switching in Ti/HfO2/TiN was investigated in-operando by hard x-ray photoelectron spectroscopy. In comparison with the virgin-state, ON- and OFF-states show enhanced Ti/TiOx/HfO2 interface oxidation, resulting from an oxygen-gettering activity of Ti. The formed TiOx layer acts in the resistive switching process as an oxygen reservoir in exchange with the non-stoichiometric HfO2-delta. A Ti1+/Ti3+ valence change redox reaction occurs between OFF-and ON-states. The peak shifts are attributed to space charge potentials created by the varying oxygen vacancy concentration at the interface. A push-pull model of oxygen vacancies as a function of voltage polarity is proposed to describe the mechanism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4756897]
引用
收藏
页数：5
相关论文
共 50 条
  • [1] In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells
    Sowinska, Malgorzata
    Bertaud, Thomas
    Walczyk, Damian
    Thiess, Sebastian
    Calka, Pauline
    Alff, Lambert
    Walczyk, Christian
    Schroeder, Thomas
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (20)
  • [2] Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures
    Sowinska, M.
    Bertaud, T.
    Walczyk, D.
    Thiess, S.
    Schubert, M. A.
    Lukosius, M.
    Drube, W.
    Walczyk, Ch.
    Schroeder, T.
    APPLIED PHYSICS LETTERS, 2012, 100 (23)
  • [3] Resistive switching in a LaMnO3+δ/TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy
    Meunier, Benjamin
    Martinez, Eugenie
    Rodriguez-Lamas, Raquel
    Pla, Dolors
    Burriel, Monica
    Boudard, Michel
    Jimenez, Carmen
    Rueff, Jean-Pascal
    Renault, Olivier
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (22)
  • [4] Non-destructive compositional depth profile analysis by Hard X-Ray Photoelectron Spectroscopy
    Rubio-Zuazo, J.
    Castro, G. R.
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
  • [5] Non-destructive measurement of in-operando lithium concentration in batteries via x-ray Compton scattering
    Suzuki, K.
    Barbiellini, B.
    Orikasa, Y.
    Kaprzyk, S.
    Itou, M.
    Yamamoto, K.
    Wang, Yung Jui
    Hafiz, H.
    Uchimoto, Y.
    Bansil, A.
    Sakurai, Y.
    Sakurai, H.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (02)
  • [6] Non-destructive depth analysis of acidic phosphate ester boundary layers by hard X-ray photoelectron spectroscopy
    Takechi-Takahashi, Naoko
    Matsushima, Kensuke
    Isomura, Noritake
    Kosaka, Satoru
    Tohyama, Mamoru
    Moritani, Hiroshi
    Aoyama, Takayuki
    Sano, Toshinari
    Maegawa, Satoru
    Itoigawa, Fumihiro
    JOURNAL OF ADVANCED MECHANICAL DESIGN SYSTEMS AND MANUFACTURING, 2022, 16 (03) : 1 - 12
  • [7] Interface analysis of HfO2 films on (100)Si using x-ray photoelectron spectroscopy
    Sokolov, A. A.
    Filatova, E. O.
    Afanas'ev, V. V.
    Taracheva, E. Yu
    Brzhezinskaya, M. M.
    Ovchinnikov, A. A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (03)
  • [8] Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure
    Nagata, T.
    Haemori, M.
    Yamashita, Y.
    Yoshikawa, H.
    Iwashita, Y.
    Kobayashi, K.
    Chikyow, T.
    APPLIED PHYSICS LETTERS, 2011, 99 (22)
  • [9] Oxygen species in HfO2 films:: An in situ x-ray photoelectron spectroscopy study
    Driemeier, C.
    Wallace, R. M.
    Baumvol, I. J. R.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)
  • [10] In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
    Chen, Q.
    Feng, Y. P.
    Chai, J. W.
    Zhang, Z.
    Pan, J. S.
    Wang, S. J.
    THIN SOLID FILMS, 2010, 518 (24) : E31 - E33
12345