Spin and Optical Properties of Silicon Vacancies in Silicon Carbide - A Review

被引:63
|
作者
Tarasenko, S. A. [1 ]
Poshakinskiy, A. V. [1 ]
Simin, D. [2 ]
Soltamov, V. A. [1 ]
Mokhov, E. N. [1 ,3 ]
Baranov, P. G. [1 ]
Dyakonov, V. [2 ,4 ]
Astakhov, G. V. [1 ,2 ]
机构
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] Julius Maximilian Univ Wurzburg, Expt Phys 6, D-97074 Wurzburg, Germany
[3] ITMO Univ, St Petersburg 197101, Russia
[4] Bavarian Ctr Appl Energy Res ZAE Bayern, D-97074 Wurzburg, Germany
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 01期
基金
俄罗斯科学基金会;
关键词
magnetometry; SiC; spin centers; spin noise; thermometry; vacancies; EPR IDENTIFICATION; ROOM-TEMPERATURE; EMITTING DIODE; COLOR-CENTER; DEFECTS; GROWTH; 4H; DEVICES; SENSORS; NOISE;
D O I
10.1002/pssb.201700258
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We discuss the fine structure and spin dynamics of spin-3/2 centers associated with silicon vacancies in silicon carbide. The centers have optically addressable spin states which makes them highly promising for quantum technologies. The fine structure of the spin centers turns out to be highly sensitive to mechanical pressure, external magnetic and electric fields, temperature variation, etc., which can be utilized for efficient room-temperature sensing, particularly by purely optical means or through the optically detected magnetic resonance. We discuss the experimental achievements in magnetometry and thermometry based on the spin state mixing at level anticrossings in an external magnetic field and the underlying microscopic mechanisms. We also discuss spin fluctuations in an ensemble of vacancies caused by interaction with environment.
引用
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页数:9
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