Investigating the effect of buffer layer on magnetoresistance in organic spin-valves

被引：0
|
作者：
Qin, W. [1 ]
Zhang, Y. B. [2 ]
Xie, S. J. [1 ]
机构：
[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Ocean Univ China, Coll Informat Sci & Engn, Qingdao 266003, Peoples R China
来源：
SYNTHETIC METALS | 2013年 / 176卷
关键词：
Organic spintronics; Buffer layer; Magnetoresistance; TRANSPORT; INJECTION;
D O I：
10.1016/j.synthmet.2013.06.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
According to the magnetoresistance (MR) experiments in the Co/Al2O3/Alq(3)/LSMO device, we investigate spin injection and MR of this organic device. Taking into account the spin-related resistance and partial voltage of the Al2O3 buffer layer, we obtain an apparent adjustable MR of the organic device. A large MR is predicated with an optimized buffer layer thickness. In addition, the effects of different buffer layer materials on the MR are discussed to give a suggestion on experimental investigations. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：92 / 95
页数：4
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