Radiation-stimulated ordering effect in CdS crystals

被引：1

作者：

Pavlyk, B ^{[1
]}

Tsybulyak, B ^{[1
]}

Klochan, O ^{[1
]}

机构：

[1] Ivan Franko Lviv Natl Univ, Dept Phys, UA-79005 Lvov, Ukraine

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷

关键词：

CdS; diffusion; radiation-stimulated ordering effect; surface barrier structure;

D O I：

10.4028/www.scientific.net/SSP.82-84.587

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of low-doses X-ray radiation on the bulk properties of CdS single crystals and also the change of electro-physical parameters (I-V and C-V characteristics, density of surface states) of Au-CdS surface-barrier structures was investigated. It was established that the radiation-stimulated ordering in the bulk of the semiconductor (the increases electrons mobility and conductivity, carriers concentration remains constant) is observed at irradiation doses up to D <0.19 C/k-g. The improvement and stabilization of parameters of Au-CdS diodes at irradiation doses up to D similar to 8 C/k-g was obtained. Analysis of radiation-stimulated ordering effect, which is based on modified diffusion equation was performed.

引用

页码：587 / 591

页数：5

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