Radiation-stimulated ordering effect in CdS crystals

The effect of low-doses X-ray radiation on the bulk properties of CdS single crystals and also the change of electro-physical parameters (I-V and C-V characteristics, density of surface states) of Au-CdS surface-barrier structures was investigated. It was established that the radiation-stimulated ordering in the bulk of the semiconductor (the increases electrons mobility and conductivity, carriers concentration remains constant) is observed at irradiation doses up to D <0.19 C/k-g. The improvement and stabilization of parameters of Au-CdS diodes at irradiation doses up to D similar to 8 C/k-g was obtained. Analysis of radiation-stimulated ordering effect, which is based on modified diffusion equation was performed.