Study of photomodulation dynamics of excitonic reflectivity in GaAs/AlAs quantum well heterostructures

被引：0
|
作者：
Kavaliauskas, J
Cechavicius, B
Krivaite, G
Kadushkin, VI
Shangina, EL
机构：
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
[2] Ryazan State Pedag Univ, RU-390000 Ryazan, Russia
来源：
ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001 | 2002年 / 384-3卷
关键词：
nanostructures; GaAs/AlAs quantum wells; photomodulation spectroscopy; excitonic transitions;
D O I：
10.4028/www.scientific.net/MSF.384-385.83
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The spectral, temperature and time dependences of photoinduced changes of type-l excitonic transitions in GaAs/AlAs single QW structures were studied using wavelength-modulated reflectance spectroscopy. It was revealed that photoinduced changes of exciton spectra are closely related to the photoexcitation and redistribution of photocarriers in the QW region. It was obtained that the decay of photoinduced changes occurs in the millisecond range at 300 K and in the second range at 90 K. The temperature dependence of decay time is discussed in terms of both tunneling and thermal emission of photo-excited carriers from the QW.
引用
收藏
页码：83 / 86
页数：4
相关论文
共 50 条
  • [21] Excitonic transitions in ZnO/MgZnO quantum well heterostructures
    Coli, G
    Bajaj, KK
    APPLIED PHYSICS LETTERS, 2001, 78 (19) : 2861 - 2863
  • [22] EXPERIMENTAL-STUDY OF MICROWAVE REFLECTION GAIN OF ALAS GAAS ALAS QUANTUM WELL STRUCTURES
    STAPLETON, SP
    DEEN, MJ
    BEROLO, E
    HARDY, RHS
    ELECTRONICS LETTERS, 1990, 26 (02) : 84 - 85
  • [23] A piezoelectric photothermal study of InGaAs/GaAs quantum well heterostructures
    Wang, P.
    Nakagawa, T.
    Fukuyama, A.
    Maeda, K.
    Iwasa, Y.
    Ozeki, M.
    Akashi, Y.
    Ikari, T.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 826 - 829
  • [24] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES
    DALLESASSE, JM
    HOLONYAK, N
    SUGG, AR
    RICHARD, TA
    ELZEIN, N
    APPLIED PHYSICS LETTERS, 1990, 57 (26) : 2844 - 2846
  • [25] EVIDENCE FOR COHERENT INTERACTION BETWEEN QUANTUM-WELL STATES IN ALAS/GAAS TRIPLE BARRIER HETEROSTRUCTURES
    COLLINS, DA
    CHOW, DH
    TING, DZY
    YU, ET
    SODERSTROM, JR
    MCGILL, TC
    SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (04) : 455 - 458
  • [26] Coupling of coherent phonons to excitonic quantum beats in GaAs/AlAs multiple quantum wells
    Mizoguchi, K
    Kojima, O
    Nakayama, M
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS IX, 2005, 5725 : 246 - 256
  • [27] INTERFACES IN GAAS ALAS QUANTUM-WELL STRUCTURES
    GAMMON, D
    SHANABROOK, BV
    KATZER, DS
    APPLIED PHYSICS LETTERS, 1990, 57 (25) : 2710 - 2712
  • [28] Study of Franz-Keldysh oscillations of GaAs/Si/GaAs and AlAs/Si/AlAs heterostructures
    1600, (American Inst of Physics, Woodbury, NY, USA):
  • [29] A STUDY OF FRANZ-KELDYSH OSCILLATIONS OF GAAS/SI/GAAS AND ALAS/SI/ALAS HETEROSTRUCTURES
    MELENDEZLIRA, M
    JIMENEZSANDOVAL, S
    LOPEZLOPEZ, M
    HERNANDEZCALDERON, I
    KAWAI, T
    PAK, K
    YONEZU, H
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) : 3616 - 3619
  • [30] Dynamics of Excitonic Polaritons in Semiconductor Heterostructures with Quantum Wells
    Trifonov, A. V.
    Efimov, Yu. P.
    Eliseev, S. A.
    Lovtcius, V. A.
    Shapochkin, P. Yu.
    Ignatiev, I. V.
    2017 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS), 2017, : 2566 - 2571
12345