Effect of the RTP on the Properties of Silicon Nitride Grown by PECVD

被引：0
|
作者：
Hao, Qiuyan [1 ]
Liu, Caichi [1 ]
Xie, Xinjian [1 ]
Chen, Yuwu [1 ]
Wang, Lijian [1 ]
Sun, Haizhi [1 ]
Zhao, Jianguo [1 ]
机构：
[1] Hebei Univ Technol, Inst Informat Funct Mat, Tianjin 300130, Peoples R China
来源：
PROCEEDINGS OF 2ND INTERNATIONAL SYMPOSIUM ON PHYSICS AND HIGH-TECH INDUSTRY, 4TH INTERNATIONAL SYMPOSIUM ON MAGNETIC INDUSTRY, 1ST SHENYANG FORUM FOR DEVELOPMENT AND COOPERATION OF HIGH-TECH INDUSTRY IN NORTHEAST ASIA | 2009年
关键词：
DEPOSITION; PLASMA;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiNx thin films were prepared on silicon wafer by in-line PECVD, and different rapid thermal processes (RTP) were performed on the SiNx thin films in N2. The characteristics of SiNx thin films after RTP were investigated by Atomic Force Microscope (AFM), spectral ellipsometry, and Quasi-steady State Photoconductance Decay (QSSPCD).
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页码：293 / 295
页数：3
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