Midinfrared emission from near-infrared quantum-dot lasers

被引：47
|
作者：
Grundmann, M
Weber, A
Goede, K
Ustinov, VM
Zhukov, AE
Ledentsov, NN
Kop'ev, PS
Alferov, ZI
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 01期
关键词：
D O I：
10.1063/1.126858
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the electrically pumped emission of midinfrared (MIR) radiation from bipolar quantum-dot lasers during near-infrared lasing. The MIR spectrum exhibits a peak at 16 mu m and is dominantly TM polarized. The MIR intensity exhibits a superlinear dependence on the injection; a maximum MIR power of 0.1 mu W per facet was realized. Such a device is also modeled theoretically, and conditions for MIR lasing are predicted. (C) 2000 American Institute of Physics. [S0003-6951(00)00727-0].
引用
收藏
页码：4 / 6
页数：3
相关论文
共 50 条
  • [41] Multiple quantum-dot infrared phototransistors
    Ryzhii, V
    Ershov, M
    Khmyrova, I
    Ryzhii, M
    Iizuka, T
    PHYSICA B, 1996, 227 (1-4): : 17 - 20
  • [42] Broadband Quantum-Dot Infrared Photodetector
    Lin, Wei-Hsun
    Tseng, Chi-Che
    Chao, Kuang-Ping
    Kung, Shu-Yen
    Lin, Shih-Yen
    Wu, Meng-Chyi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 22 (13) : 963 - 965
  • [43] The theory of quantum-dot infrared phototransistors
    Ryzhii, V
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) : 759 - 765
  • [44] Gain characteristics of quantum-dot injection lasers
    Zhukov, AE
    Kovsh, AR
    Ustinov, VM
    Egorov, AY
    Ledentsov, NN
    Tsatsul'nikov, AF
    Maksimov, MV
    Zaitsev, SV
    Shernyakov, YM
    Lunev, AV
    Kop'ev, PS
    Alferov, ZI
    Bimberg, D
    SEMICONDUCTORS, 1999, 33 (09) : 1013 - 1015
  • [45] Long-wavelength quantum-dot lasers
    M. Grundmann
    N. N. Ledentsov
    F. Hopfer
    F. Heinrichsdorff
    F. Guffarth
    D. Bimberg
    V. M. Ustinov
    A. E. Zhukov
    A. R. Kovsh
    M. V. Maximov
    Yu. G. Musikhin
    Zh. I. Alferov
    J. A. Lott
    N. D. Zhakharov
    P. Werner
    Journal of Materials Science: Materials in Electronics, 2002, 13 : 643 - 647
  • [46] Long-wavelength quantum-dot lasers
    Grundmann, M
    Ledentsov, NN
    Hopfer, F
    Heinrichsdorff, F
    Guffarth, F
    Bimberg, D
    Ustinov, VM
    Zhukov, AE
    Kovsh, AR
    Maximov, MV
    Musikhin, YG
    Alferov, ZI
    Lott, JA
    Zhakharov, ND
    Werner, P
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2002, 13 (11) : 643 - 647
  • [47] Gain characteristics of quantum-dot injection lasers
    A. E. Zhukov
    A. R. Kovsh
    V. M. Ustinov
    A. Yu. Egorov
    N. N. Ledentsov
    A. F. Tsatsul’nikov
    M. V. Maksimov
    S. V. Zaitsev
    Yu. M. Shernyakov
    A. V. Lunev
    P. S. Kop’ev
    Zh. I. Alferov
    D. Bimberg
    Semiconductors, 1999, 33 : 1013 - 1015
  • [48] Quantum-dot infrared photodetectors: a review
    Stiff-Roberts, Adrienne D.
    JOURNAL OF NANOPHOTONICS, 2009, 3
  • [49] Photovoltaic quantum-dot infrared detectors
    Pan, D
    Towe, E
    Kennerly, S
    APPLIED PHYSICS LETTERS, 2000, 76 (22) : 3301 - 3303
  • [50] Near-infrared intersubband emission from GaN/AlN quantum dots and quantum wells
    Nevou, L.
    Julien, F. H.
    Tchernycheva, M.
    Guillot, F.
    Sarigiannidou, E.
    Monroy, E.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 2120 - +
12345