Feasibility Study of Si and SiC MOSFETs in High-Gain DC/DC Converter for Renewable Energy Applications

被引：0
|
作者：
Blinov, Andrei [1 ]
Chub, Andrii [1 ]
Vinnikov, Dmitri [1 ]
Rang, Toomas [2 ]
机构：
[1] Tallinn Univ Technol, Dept Elect Engn, EE-19086 Tallinn, Estonia
[2] Tallinn Univ Technol, Thomas Johann Seedbeck Dept Elect, EE-19086 Tallinn, Estonia
来源：
39TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2013) | 2013年
关键词：
silicon carbide; efficiency; hard-switched converter;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents an evaluative comparison of Si- and SiC-based MOSFETs, operating in a qZS-derived step-up DC/DC converter. Special attention is paid to switching behaviour and power dissipation. A range of experiments was performed to determine an optimal di/dt value during transients to minimise overvoltages and dynamic losses. Additionally, some particular properties such as gate driver requirements, housing types and price are discussed.
引用
收藏
页码：5975 / 5978
页数：4
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