Noise Analysis and Optimization of Terahertz Photoconductive Emitters

被引：9
|
作者：
Hou, Lei [1 ]
Shi, Wei [1 ]
Chen, Suguo [1 ]
机构：
[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2013年 / 19卷 / 01期
基金：
中国国家自然科学基金;
关键词：
GaAs:O; Photoconductive antenna; signal-to-noise ratio (SNR); terahertz; ION-IMPLANTED GAAS; ANTENNAS; GENERATION; SATURATION; PULSES;
D O I：
10.1109/JSTQE.2012.2188781
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electromagnetic noise generated by terahertz photoconductive emitters was investigated, and the intensity of noise spectrum was analyzed by statistical method. The relationship between the noise of the emitter and the resistivity as well as carrier lifetime of the antenna material was obtained. And the effect of carrier lifetime and mobility of antennas on the THz generation efficiency was investigated. Based on those results, GaAs:O material was fabricated by an ion implantation technique to obtain the required performance. The signal-to-noise ratio of the GaAs:O emitter was remarkably improved compared with a SI-GaAs emitter at the same experimental condition.
引用
收藏
页码：108 / 112
页数：5
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