Indium droplet formation during molecular beam epitaxy of InGaN

被引：18

作者：

Chaly, VP

Borisov, BA

Demidov, DM

Krasovitsky, DM

Pogorelsky, YV

Shkurko, AP

Sokolov, IA

Karpov, SY

机构：

[1] ATC Semicond Devices Ltd, St Petersburg 194156, Russia

[2] Soft Impact Ltd, St Petersburg 194156, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 206卷 / 1-2期

关键词：

MBE; InGaN; droplet formation; surface segregation;

D O I：

10.1016/S0022-0248(99)00298-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Critical indium flux resulting in liquid droplet formation on the surface of InGaN ternary compound is measured as a function of temperature using laser reflectometry. In contrast to other III-V compounds In droplets are found to be formed on the surface of the growing crystal both under metal- and N-rich conditions. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：147 / 149

页数：3

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