Optical properties of AlxGa1-xAsySb1-y epitaxial layers

被引：0
|
作者：
Swiatek, K [1 ]
Piskorski, M [1 ]
Piotrowski, TT [1 ]
机构：
[1] INST ELECTRON TECHNOL, PL-02668 WARSAW, POLAND
来源：
ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Photoluminescence spectra of AlxGa1-xAsySb1-y layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al0.20Ga0.80As0.02Sb0.98 band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.
引用
收藏
页码：1100 / 1102
页数：3
相关论文
共 50 条
  • [21] Low-temperature transport properties in AlxGa1-xAsySb1-y/InAs quantum wells:: Well-width dependence
    Ishida, S.
    Fujimoto, A.
    Araki, M.
    Oto, K.
    Okamoto, A.
    Shibasaki, I.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 199 - 202
  • [22] Interfaces in GaxIn1-xAsySb1-y/AlxGa1-xAsySb1-y multi-quantum-well heterostructures probed by transmittance anisotropy spectroscopy -: art. no. 066107
    Cerda-Méndez, EA
    Balderas-Navarro, RE
    Lastras-Martínez, A
    Lastras-Martínez, LF
    Garnache, A
    Cerutti, L
    Jouillé, A
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (06)
  • [23] PECULIARITIES OF DEFECT FORMATION IN EPITAXIAL LAYERS GAXIN1-XASYSB1-Y
    VDOVIN, VI
    DOLGINOV, LM
    DRUZHININA, LV
    LAPSHIN, AN
    MILVIDSKY, MG
    OSVENSKY, VB
    SHERSHAKOV, AN
    YUGOVA, TG
    KRISTALLOGRAFIYA, 1981, 26 (04): : 799 - 804
  • [24] THE ROLE OF INTERFACE STRAIN IN DETERMINING BAND OFFSETS IN LATTICE MATCHED INAS/ALXGA1-XASYSB1-Y (001) SUPERLATTICES
    NELSON, JS
    KURTZ, SR
    DAWSON, LR
    LOTT, JA
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 29 - 30
  • [25] REFRACTIVE-INDEXES OF ALSB AND GASB-LATTICE-MATCHED ALXGA1-XASYSB1-Y IN THE TRANSPARENT WAVELENGTH REGION
    ALIBERT, C
    SKOURI, M
    JOULLIE, A
    BENOUNA, M
    SADIQ, S
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) : 3208 - 3211
  • [26] Features of defect formation during the growth of double heterostructures for injection lasers based on AlxGa1-xAsySb1-y/GaSb materials
    Kuznetsov, G. F.
    SEMICONDUCTORS, 2013, 47 (08) : 1110 - 1115
  • [27] OPTICAL-PROPERTIES OF GAXIN1-XASYSB1-Y
    BELOV, AG
    BELOGOROKHOV, AI
    BOCHKAREV, AE
    DOLGINOV, LM
    DRUZHININA, LV
    ZINGER, GM
    ILIN, MA
    KARASEV, PY
    MILVIDSKII, MG
    RZAEV, DA
    RYSKIN, AI
    FIZIKA TVERDOGO TELA, 1984, 26 (01): : 145 - 150
  • [28] Study of spin-orbit interaction in AlxGa1-xAsySb1-y/InAs quantum well by means of persistent photoconductivity effect on weak localization
    Ishidal, S.
    Fujimoto, A.
    Oto, K.
    Takeda, K.
    Shibasaki, I.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 569 - +
  • [29] Passivation of InAsA/(GaIn)Sb short-period superiattice photodiodes with 10 μm cutoff wavelength by epitaxial overgrowth with AlxGa1-xAsySb1-y -: art. no. 173501
    Rehm, R
    Walther, M
    Fuchs, F
    Schmitz, J
    Fleissner, J
    APPLIED PHYSICS LETTERS, 2005, 86 (17) : 1 - 3
  • [30] GROWTH AND PROPERTIES OF ALXGA1-XN EPITAXIAL LAYERS
    BARANOV, B
    DAWERITZ, L
    GUTAN, VB
    JUNGK, G
    NEUMANN, H
    RAIDT, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02): : 629 - 636
12345