From Fieldlike Torque to Antidamping Torque in Antiferromagnetic Mn2Au

Efficient electrical switching of antiferromagnets is at the center of their application in high-density and ultrafast nonvolatile memories. Antiferromagnetic (AFM) Mn2Au with opposite-spin sublattices is a unique metallic material in which the Edelstein effect can induce fieldlike torque switching of the AFM moments. However, the antidamping-torque-induced AFM moment switching remains to be proved in metallic AFM materials. Here, we demonstrate current-induced AFM moment switching in both a (103)-oriented Mn2Au single layer and Mn2Au/Pt heterojunction, detected by the spin Hall magnetoresistance and anisotropic magnetoresistance at room temperature. In (103)-oriented Mn2Au, fieldlike torque induces the alignment of AFM moments perpendicular to the writing current direction. Once the (103)-oriented Mn2Au film is covered by a thin Pt layer, the antidamping torque induced by the spin current from the Pt layer drives the AFM moments of Mn2Au switching toward the direction parallel to the writing current, which is in contrast to the case without Pt. The simultaneous realization of fieldlike torque and antidamping torque in metallic Mn2Au makes it a promising candidate in AFM spintronics.