Mn-implanted dilute magnetic semiconductor InP:Mn

Unintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various. doses of Mn+.. The properties of Mn+-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrations of Mn of 0.8% and 8.8%, respectively. The results of photoluminescence (PL) measurement showed that optical broad transitions related to Mn appeared near 1.089, 1.144, and 1.185 eV in samples with various doses of Mn+. It was confirmed that the photoluminescence peaks near. 1.089, 1.144; and 1.185 eV were Mn-correlated PL bands by the implantation of Mn: Ferromagnetic hysteresis loops measured at 10 K were observed and. the temperature-dependent magnetization showed ferromagnetic behavior around 90 K, which almost agreed with. the theoretical prediction (T-c similar to 70 K). (C) 2004 American Institute of Physics.